PART |
Description |
Maker |
636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation Hittite Microwave Corpo...
|
CGD982LC |
1 GHz, 23 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
HMC694 |
GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz
|
Hittite Microwave Corporation
|
CGD985LC |
1 GHz, 25 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
HMC31307 313E |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
HMC625HFLP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz
|
Hittite Microwave Corporation
|
HMC626LP5 HMC626LP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 1 GHz
|
Hittite Microwave Corpo... Hittite Microwave Corporation
|
HMC626ALP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 1 GHz
|
Hittite Microwave Corpo...
|
HMC627LP5 HMC627LP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz
|
Hittite Microwave Corporation
|
HMC681LP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER w/ SERIAL CONTROL, DC - 1 GHz
|
Hittite Microwave Corporation
|
HMMC-3024 |
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-4 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标 DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-4 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路4定标
|
Agilent(Hewlett-Packard)
|
CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|